PART |
Description |
Maker |
K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HY5V22GF HY5V22GF-H HY5V22GF-P |
4 Banks x 1M x 32Bit Synchronous DRAM
|
Hynix Semiconductor
|
K4S283233F-M |
1M x 32Bit x 4 Banks SDRAM in 90 FBGA Data Sheet
|
Samsung Electronic
|
K4S283233F K4S283233F-C K4S283233F-F1H K4S283233F- |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz 13.56MHz RFID Transponder MEMORY SPECTRUM AUTOMOTIVE RELAY 4 Banks x 1M x 32Bit Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表 Holtek Semiconductor Inc. Infineon Technologies AG 厦门宏发电声股份有限公司 Hynix Semiconductor Inc. Integrated Device Technology, Inc.
|
MT47H32M16HR-25E MT47H64M8CF-25EG |
DDR2 SDRAM MT47H128M4 ?32 Meg x 4 x 4 banks MT47H64M8 ?16 Meg x 8 x 4 banks MT47H32M16 ?8 Meg x 16 x 4 banks
|
Micron Technology
|
MT48LC16M16A2P-75DTR |
SDR SDRAM MT48LC64M4A2 ?16 Meg x 4 x 4 banks MT48LC32M8A2 ?8 Meg x 8 x 4 banks MT48LC16M16A2 ?4 Meg x 16 x 4 banks
|
Micron Technology
|
MT48LC32M16A2P-75ITC |
SDR SDRAM MT48LC128M4A2 ?32 Meg x 4 x 4 banks MT48LC64M8A2 ?16 Meg x 8 x 4 banks MT48LC32M16A2 ?8 Meg x 16 x 4 banks
|
Micron Technology
|